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DG1411E, dg1412e, dg1413e www.vishay.com vishay siliconix s17-0054-rev. c, 23-jan-17 1 document number: 75104 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 1.5 ? on resistance, 15 v / +12 v / 5 v, quad spst switches description the DG1411E, dg1412e, dg1413e are 15 v precision monolithic quad single-pole single-throw (spst) cmos analog switches. built on a new cmos process, the vishay siliconix DG1411E, dg1412e, and dg1413e offer low on-resistance of 1.5 ? . the low and flat resistance over the full signal range ensures excellent linearity and low signal distortion. the new cmos platform provides low power dissipation, minimi zed parasitic capa citance, and low charge injection. the devices operate from either a single 4.5 v to 24 v power supply, or from dual 4.5 v to 15 v power supplies. the analog switches do not require a v l logic supply, while all digital inputs have 0.8 v and 2 v logic thresholds to ensure low voltage ttl / cmos compatibility. the DG1411E, dg1412e, and dg1413e are bi-directional and support analog signals up to the supply voltage when on, and block them when off. the devices each feature four independently selectable sp st switches. the DG1411E is normally closed, while the dg1412e is normally open. the dg1413e has two normally open and two normally closed switches with guaranteed break-before-make operation. combined with fast 70 ns swit ching time, low and flat switch resistance. the devices are ideal for signal switching and relay replacement in data acquis ition, industrial control and automation, communication, and a/v systems, in addition to medical instrument ation and automated test equipment. the switches are available in rohs-compliant, halogen-free tssop16 and qfn16 4 mm by 4 mm packages. features ? 35 v supply max. rating ? on-resistance: 1.5 ? ? on-resistance flatness: 0.2 ? ? channel to channel on-resistance match: 0.04 ? ? supports single and dual supply operation ? fully specified at 15 v, 5 v, and +12 v ? integrated v l supply ? 3 v logic compatible ? low parasitic capacitance: c s(off) : 24 pf, c d(on) : 87 pf ? rail to rail signal handling ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 benefits ? low insertion loss ? low distortion ? break-before-make switching ? low charge injection over the full signal range applications ? medical and healthcare equipment ? data acquisition system ? industrial control and automation ? test and measurement equipment ? communication systems ? battery powered systems ? sample and hold circuits ? audio and video signal switching ? relay replacement functional block diagram and pin configuration - DG1411E notes ? qfn exposed pad tied to v- ? n.c. = no connect ? switches shown for logic 0 input truth table - DG1411E logic switch 0on 1off DG1411Een v- v+ s4 gnd s3 n.c. s1 s2 1 2 3 12 11 10 4 9 5678 16 15 14 13 to p v i ew qfn-16 (4 mm x 4 mm) d1 in1 in2 d2 d4 in4 in3 d3 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 top view in1 in2 d1 d2 s1 s2 v- v+ gnd n.c. s4 s3 d4 d3 in4 in3 tssop DG1411Eeq
DG1411E, dg1412e, dg1413e www.vishay.com vishay siliconix s17-0054-rev. c, 23-jan-17 2 document number: 75104 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 functional block diagram and pin configuration - dg1412e notes ? qfn exposed pad tied to v- ? n.c. = no connect ? switches shown for logic 0 input functional block diagram and pin configuration - dg1413e notes ? qfn exposed pad tied to v- ? n.c. = no connect ? switches shown for logic 0 input truth table - dg1412e logic switch 0off 1on dg1412een v- v+ s4 gnd s3 n.c. s1 s2 1 2 3 12 11 10 4 9 5678 16 15 14 13 to p v i ew qfn-16 (4 mm x 4 mm) d1 in1 in2 d2 d4 in4 in3 d3 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 top view in1 in2 d1 d2 s1 s2 v- v+ gnd n.c. s4 s3 d4 d3 in4 in3 tssop dg1412eeq truth table - dg1413e logic switches 1, 4 switches 2, 3 0offon 1onoff dg1413een v- v+ s4 gnd s3 n.c. s1 s2 1 2 3 12 11 10 4 9 5678 16 15 14 13 top view qfn-16 (4 mm x 4 mm) d1 in1 in2 d2 d4 in4 in3 d3 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 top view in1 in2 d1 d2 s1 s2 v- v+ gnd n.c. s4 s3 d4 d3 in4 in3 tssop dg1413eeq
DG1411E, dg1412e, dg1413e www.vishay.com vishay siliconix s17-0054-rev. c, 23-jan-17 3 document number: 75104 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. device options part number configuration switch function temperature range package DG1411Een-t1-ge4 quad spst nc -40 c to +125 c qfn (4 mm x 4 mm) 16l (variation 2) dg1412een-t1-ge4 quad spst no -40 c to +125 c qfn (4 mm x 4 mm) 16l (variation 2) dg1413een-t1-ge4 quad spst nc / no -40 c to + 125 c qfn (4 mm x 4 mm) 16l (variation 2) DG1411Eeq-t1-ge4 quad spst nc -40 c to +125 c tssop-16 dg1412eeq-t1-ge4 quad spst no -40 c to +125 c tssop-16 dg1413eeq-t1-ge4 quad spst nc / no -40 c to +125 c tssop-16 absolute maximum ratings electrical parameter conditions limits unit v+ reference to gnd -0.3 to +25 v v- reference to gnd +0.3 to -25 v+ to v- +35 analog inputs (s or d) (v-) - 0.3 to (v+) + 0.3 digital inputs gnd - 0.3 to (v+) + 0.3 maximum continuous switch current tssop-16, t a = 25 c 190 ma qfn (4 mm x 4 mm) 16l, t a = 25 c 250 tssop-16, t a = 125 c 90 qfn (4 mm x 4 mm) 16l, t a = 125 c 100 maximum pulse switch current pul se at 1 ms, 10 % duty cycle 500 thermal resistance tssop-16 130 c/w qfn (4 mm x 4 mm) 16l 32 temperature operating temperature -40 to +125 c max. operating junction temperature 150 operating junction temperature 125 storage temperature -65 to +150
DG1411E, dg1412e, dg1413e www.vishay.com vishay siliconix s17-0054-rev. c, 23-jan-17 4 document number: 75104 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical characteristics - 15 v supply parameter symbol test conditions unless otherwise specified v+ = 15 v, v- = -15 v v inh = 2 v, v inl = 0.8 v +25 c -40 c to +85 c -40 c to +125 c typ. / max. unit analog switch analog signal range v analog 0 to v+ - v drain-source on-resistance r ds(on) v s = 10 v, i s = -10 ma v+ = 13.5 v, v- = -13.5 v 1.5 - - typ. ? 1.8 2 2.3 max. on-resistance flatness r flat(on) v s = 10 v, i s = -10 ma 0.2 - - - ? 0.42 0.45 0.48 max. on-resistance matching ? r ds(on) 0.04 - - typ. 0.22 0.23 0.24 max. switch off leakage current i s /i d(off) v+ = 16.5 v, v- = -16.5 v v s = 10 v, v d = 10 v 0.01 - - typ. na 0.5 2 12 max. channel on leakage current i d(on) v s = v d = 10 v 0.05 - - typ. 1 3 40 max. digital control input, high voltage v inh -- 2 v min. v input, low voltage v inl -- 0.8v max. input leakage i in v in = v gnd or v+ 0.001 - - typ. a -- 0.1max. digital input capacitance c in 3.5 - - typ. pf dynamic characteristics break-before-make time t open v s1 = v s2 = 10 v r l = 300 ? , c l = 35 pf 24 - - typ. ns - - 10 min. turn-on time t on v s = 10 v r l = 300 ? , c l = 35 pf 70 - - typ. 110 130 140 max. turn-off time t off 50 - - typ. 90 100 110 max. charge injection q inj c l = 1 nf, r gen = 0 ? , v s = 0 v -41 - - typ. pc off isolation oirr c l = 5 pf, r l = 50 ? , 100 khz -78 - - typ. db cross talk x talk c l = 5 pf, r l = 50 ? , 1 mhz -104 - - typ. insertion loss f = 1mhz, r l = 50 ? , c l = 5 pf -0.16 - - typ. total harmonic distortion thd r l = 110 ? , 15 v p-p , f = 20 hz to 20 khz 0.0039 - - typ. % bandwidth, -3 db bw c l = 5 pf, r l = 50 ? 150 - - typ. mhz source off capacitance c s(off) f = 1 mhz, v s = 0 v 24 - - typ. pf drain off capacitance c d(off) 23 - - typ. drain on capacitance c d(on) 87 - - typ. power requirements power supply range gnd = 0 v 4.5 v min. / 16.5 max. v power supply current i+ digital inputs 0 or v+ v+ = 16.5 v, v- = -16.5 v 0.001 - - typ. a -- 1max. in1 = in2 = in3 = in4 = 5 v 113 - - typ. - 260 290 max. i- digital inputs 0 or v+ 0.001 - - typ. -- 1max. ? ?
DG1411E, dg1412e, dg1413e www.vishay.com vishay siliconix s17-0054-rev. c, 23-jan-17 5 document number: 75104 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical characteristics - single 12 v supply parameter symbol test conditions unless otherwise specified v+ = 12 v, v- = -0 v v inh = 2 v, v inl = 0.8 v +25 c -40 c to +85 c -40 c to +125 c typ. / max. unit analog switch analog signal range v analog 0 to v+ v drain-source on-resistance r ds(on) v s = 0 v to 10 v, i s = -10 ma; v+ = 10.8 v, v- = 0 v 2.5 - - typ. ? 3.1 3.8 4.4 max. on-resistance flatness r flat(on) v s = 0 v to 10 v; i s = -10 ma 0.7 - - typ. ? 0.9 1 1.1 max. on-resistance matching ? r ds(on) 0.04 - - typ. 0.19 0.22 0.25 max. switch off leakage current i s /i d(off) v+ = 10.8 v, v- = 0 v v s = 1 v/10 v; v d = 10 v/1 v 0.02 - - typ. na 0.55 1.2 10 max. channel on leakage current i d(on) v s = v d = 3.2 v/10 v 0.01 - - typ. 1 2 35 max. digital control input, high voltage v inh -- 2 min. v input, low voltage v inl --0.8max. input leakage i in v in = v gnd or v+ 0.001 - - typ. a -- 0.1max. digital input capacitance c in 3.5 - - typ. pf dynamic characteristics break-before-make time t open v s1 = v s2 = 8 v r l = 300 ? , c l = 35 pf 90 - - typ. ns - - 50 min. turn-on time t on v s = 8 v r l = 300 ? , c l = 35 pf 150 - - typ. 190 230 260 max. turn-off time t off 60 - - typ. 100 110 120 max. charge injection q inj c l = 1 nf, r gen = 0 ? , v s = 6 v 6 - - typ. pc off isolation oirr r l = 50 ? , c l = 5 pf, 100 khz -78 - - typ. db cross talk x talk r l = 50 ? , c l = 5 pf, 1 mhz -106 - - typ. insertion loss f = 1 mhz, r l = 50 ? , c l = 5 pf -0.23 - - typ. bandwidth, -3 db bw r l = 50 ? , c l = 5 pf 150 - - typ. mhz source off capacitance c s(off) f = 1 mhz, v s = 6 v 31 - - typ. pf drain off capacitance c d(off) 29 - - typ. drain on capacitance c d(on) 93 - - typ. power requirements power supply range gnd = 0 v, v- = 0 v 5 v min. / 16.5 max. v power supply current i+ digital inputs 0 or v+ v+ = 13.2 v 0.001 - - typ. a -- 1max. in1 = in2 = in3 = in4 = 5 v 54 - - typ. - 150 190 max.
DG1411E, dg1412e, dg1413e www.vishay.com vishay siliconix s17-0054-rev. c, 23-jan-17 6 document number: 75104 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical characteristics - 5 v supply parameter symbol test conditions unless otherwise specified v+ = 5 v, v- = -5 v v inh = 2 v, v inl = 0.8 v +25 c -40 c to +85 c -40 c to +125 c typ. / max. unit analog switch analog signal range v analog 0 to v+ v drain-source on-resistance r ds(on) v s = 4.5 v, i s = -10 ma v+ = 4.5 v, v- = -4.5 v 3- -typ. ? 3.3 4 4.7 max. on-resistance flatness r flat(on) v s = 4.5 v, i s = -10 ma 0.7 - - typ. 0.9 1 1.1 max. on-resistance matching ? r ds(on) 0.04 - - typ. 0.19 0.22 0.25 max. switch off leakage current i s /i d(off) v+ = 5.5 v, v- = -5.5 v v s = 4.5 v, v d = 4.5 v 0.004 - - typ. na 0.5 1.5 10 max. channel on leakage current i d(on) v s = v d = 4.5 v 0.003 - - typ. 0.5 2 35 max. digital control input, high voltage v inh -- 2min. v input, low voltage v inl --0.8max. input leakage i in v in = v gnd or v+ 0.001 - - typ. a -- 0.1max. digital input capacitance c in 3.5 - - typ. pf dynamic characteristics break-before-make time t open v s1 = v s2 = 3 v r l = 300 ? , c l = 35 pf 110 - - typ. ns --65min. turn-on time t on v s = 3 v r l = 300 ? , c l = 35 pf 280 - - typ. 330 400 440 max. turn-off time t off 180 - - typ. 220 260 280 max. charge injection q inj c l = 1 nf, r gen = 0 ? , v s = 0 v 7 - - typ. pc off isolation oirr r l = 50 ? , c l = 5 pf, 100 khz -78 - - typ. db cross talk x talk r l = 50 ? , c l = 5 pf, 1 mhz -106 - - typ. insertion loss f = 1 mhz, r l = 50 ? , c l = 5 pf -0.26 - - typ. % bandwidth, -3 db bw r l = 50 ? , c l = 5 pf 160 - - typ. mhz source off capacitance c s(off) f = 1 mhz, v s = 0 v 34 - - typ. pf drain off capacitance c d(off) 31 - - typ. drain on capacitance c d(on) 94 - - typ. power requirements power supply range gnd = 0 v 4.5 v min. / 16.5 max. v power supply current i+ digital inputs 0 v or v+ v+ = 5.5 v, v- = -5.5 v 0.001 - - typ. a -- 1max. i- digital inputs = 0 v or v+ 0.001 - - typ. -- 1max. ? ?
DG1411E, dg1412e, dg1413e www.vishay.com vishay siliconix s17-0054-rev. c, 23-jan-17 7 document number: 75104 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) on-resistance vs. analog voltage on-resistance vs. analog voltage leakage current vs. temperature on-resistance vs. temperature on-resistance vs. temperature on-resistance vs. temperature 10 100 1000 10000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -18 -14 -10 -6 -2 2 6 10 14 18 axis title 1st line 2nd line 2nd line r on - on-resistance () v d - analog voltage (v) 2nd line v = 4.5 v v = 5 v v = 7 v v = 10 v i s = -10 ma v = 13.5 v v = 12 v v = 15 v v = 16.5 v 10 100 1000 10000 0 1 2 3 4 5 6 0 5 10 15 20 axis title 1st line 2nd line 2nd line r on - on-resistance () v d - analog voltage (v) 2nd line v+ = +5 v v+ = +8 v v+ = +10.8 v v+ = +12 v v+ = +13.2 v i s = -10 ma v+ = +18 v v+ = +15 v v+ = +24 v 10 100 1000 10000 -25 -20 -15 -10 -5 0 5 10 -40-20 0 20406080100120 axis title 1st line 2nd line 2nd line leakage current (na) temperature (c) 2nd line i d(off) ,v d = 10 v i d(on) ,v d = -10 v i s(off) ,v s = -10 v i s(off) ,v s = 10 v i d(on) ,v d = 10 v i d(off) ,v d = -10 v v = 15 v 10 100 1000 10000 0 1 2 3 -15 -10 -5 0 5 10 15 axis title 1st line 2nd line 2nd line r on - on-resistance () v d - analog voltage (v) 2nd line +125 c +85 c +25 c -40 c v = 15 v i s = -10 ma 10 100 1000 10000 0 1 2 3 4 0123456789101112 axis title 1st line 2nd line 2nd line r on - on-resistance () v d - analog voltage (v) 2nd line +125 c +85 c +25 c -40 c v+ = +12 v i s =-10 ma 10 100 1000 10000 0 1 2 3 4 5 -5 -4 -3 -2 -1 0 1 2 3 4 5 axis title 1st line 2nd line 2nd line r on - on-resistance () v d - analog voltage (v) 2nd line +125 c +85 c +25 c -40 c v = 5 v i s = -10 ma
DG1411E, dg1412e, dg1413e www.vishay.com vishay siliconix s17-0054-rev. c, 23-jan-17 8 document number: 75104 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) leakage current vs. temperature leakage current vs. temperature charge injection vs. analog voltage i+ - supply current vs. logic level switching time vs. temperature bw, oirr, x talk vs. frequency 10 100 1000 10000 -25 -20 -15 -10 -5 0 5 10 -40-20 0 20406080100120 axis title 1st line 2nd line 2nd line leakage current (na) temperature (c) 2nd line i d(off) ,v d = 10 v i d(on) ,v d = 1 v i s(off) ,v s = 1 v i s(off) ,v s = 10 v i d(on) ,v d = 10 v i d(off) ,v d = 1 v v+ = +12 v 10 100 1000 10000 -25 -20 -15 -10 -5 0 5 10 -40-20 0 20406080100120 axis title 1st line 2nd line 2nd line leakage current (na) temperature (c) 2nd line i d(off) ,v d = 4.5 v i d(on) ,v d =-4.5 v i s(off) ,v s =-4.5 v i s(off) ,v s = 4.5 v i d(on) ,v d = 4.5 v i d(off) ,v d =-4.5 v v = 5 v 10 100 1000 10000 -150 -100 -50 0 50 100 150 -15 -10 -5 0 5 10 15 axis title 1st line 2nd line 2nd line q inj - charge injection (pc) v s - analog voltage (v) 2nd line v = 5 v v+ = +12 v v- = gnd v = 15 v 10 100 1000 10000 0 50 100 150 200 250 300 02468101214 axi s title 1st line 2nd line 2nd line i+ - s upply current (a) v in (v) 2nd line v+ = +13.2 v v- = 0 v v = 16.5 v v = 5.5 v i+ per logic input 10 100 1000 10000 0 50 100 150 200 250 -40-20 0 20406080100120 axis title 1st line 2nd line 2nd line t on(en) , t off(en) - switching time (ns) temperature (c) 2nd line v+ = +12 v, v s = +8 v, t on v = 15 v v s = +10 v, t on v+ = +12 v, v s = +8 v, t off v = 15 v, v s = +10 v, t off 10 100 1000 10000 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 10 100k 1m 10m 100m 1g axis title 1st line 2nd line 2nd line loss, oirr, x talk (db) frequency (hz) 2nd line oirr v = 15 v loss x talk
DG1411E, dg1412e, dg1413e www.vishay.com vishay siliconix s17-0054-rev. c, 23-jan-17 9 document number: 75104 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) thd + n vs. frequency logic threshold vs. supply voltage thd + n vs. frequency 10 100 1000 10000 0.001 0.01 0.1 10 200 2k 20k axis title 1st line 2nd line 2nd line thd + n (%) frequency (hz) 2nd line v = 15 v t a = 25 c v s = 10 v p-p v s = 15 v p-p v s = 20 v p-p 10 100 1000 10000 1.0 1.2 1.4 1.6 1.8 2.0 4 6 8 10 12 14 16 axis title 1st line 2nd line 2nd line vt - logic threshold (v) v+ - supply voltage (v) 2nd line v ih v il 10 100 1000 10000 0.001 0.01 0.1 10 200 2k 20k axis title 1st line 2nd line 2nd line thd + n (%) frequency (hz) 2nd line v = 5 v t a = 25 c v s = 10 v p-p v s = 5 v p-p v s = 2.5 v p-p
DG1411E, dg1412e, dg1413e www.vishay.com vishay siliconix s17-0054-rev. c, 23-jan-17 10 document number: 75104 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 test circuits fig. 1 - switching time fig. 2 - charge injection fig. 3 - off-isolation fig. 4 - channel off/ on capacitance vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75104 . switch input c l (includes fixture and stray capacitance) v+ in s c l 35 pf d logic input r l 300 v out gnd v+ 50 % 0 v logic input switch output t on t off logic "1" = switch on logic input waveforms inverted for switches that have the opposite logic sense. switch output v out =v d r l r l +r on 0.9 x v out t r < 5 ns t f < 5 ns v inh v inl off on on in v out v out q = v out x c l c l = 1 nf d r gen v out s v in = 0 - v+ in v gen gnd v+ v+ in depends on switch configuration: input polarity determined by sense of switch. + in gnd s 0 v, 2.4 v 10 nf d off isolation = 20 log v d v s r l analyzer v+ v+ s f = 1 mhz in d gnd 0 v, 2.4 v meter hp4192a impedance analyzer or equivalent 10 nf v+ v+
package information www.vishay.com vishay siliconix revision: 22-apr-13 1 document number: 71921 for technical questions, contact: powerictechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 qfn 4x4-16l case outline notes (1) use millimeters as the primary measurement. (2) dimensioning and tole rances conform to asme y14.5m. - 1994. (3) n is the number of terminals. nd and ne is the number of terminals in each d and e site respectively. (4) dimensions b applies to plated terminal and is measured betwee n 0.15 mm and 0.30 mm from terminal tip. (5) the pin 1 identifier must be existed on the top surface of the package by using identification mark or other feature of package body. (6) package warpage max. 0.05 mm. variation 1 variation 2 dim millimeters (1) inches millimeters (1) inches min. nom. max. min. nom. max. min. nom. max. min. nom. max. a 0.75 0.85 0.95 0.029 0.033 0.037 0.75 0.85 0.95 0.029 0.033 0.037 a1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 a3 0.20 ref. 0.008 ref. 0.20 ref. 0.008 ref. b 0.25 0.30 0.35 0.010 0.012 0.014 0.25 0.30 0.35 0.010 0.012 0.014 d 4.00 bsc 0.157 bsc 4.00 bsc 0.157 bsc d2 2.0 2.1 2.2 0.079 0.083 0.087 2.5 2.6 2.7 0.098 0.102 0.106 e 0.65 bsc 0.026 bsc 0.65 bsc 0.026 bsc e 4.00 bsc 0.157 bsc 4.00 bsc 0.157 bsc e2 2.0 2.1 2.2 0.079 0.083 0.087 2.5 2.6 2.7 0.098 0.102 0.106 k 0.20 min. 0.008 min. 0.20 min. 0.008 min. l 0.5 0.6 0.7 0.020 0.024 0.028 0.3 0.4 0.5 0.012 0.016 0.020 n (3) 16 16 16 16 nd (3) 4444 ne (3) 4444 ecn: s13-0893-rev. b, 22-apr-13 dwg: 5890 (4) (5)
vishay siliconix package information document number: 74417 23-oct-06 www.vishay.com 1 symbols dimensions in millimeters min nom max a - 1.10 1.20 a1 0.05 0.10 0.15 a2 - 1.00 1.05 b 0.22 0.28 0.38 c - 0.127 - d 4.90 5.00 5.10 e 6.10 6.40 6.70 e1 4.30 4.40 4.50 e-0.65- l 0.50 0.60 0.70 l1 0.90 1.00 1.10 y--0.10 1036 ecn: s-61920-rev. d, 23-oct-06 dwg: 5624 tssop: 16-lead
pad pattern www.vishay.com vishay siliconix revision: 02-sep-11 1 document number: 63550 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 recommended minimum pad for tssop-16 0.281 (7.15) recommended minimum pads dimensions in inches (mm) 0.171 (4.35) 0.055 (1.40) 0.012 (0.30) 0.026 (0.65) 0.014 (0.35) 0.193 (4.90)
legal disclaimer notice www.vishay.com vishay revision: 13-jun-16 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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